MEMS M×N Matrix

operating wavelength

nm

O/C/L/L+ band

Wavelength of test

nm

1310/1550/1625/1650

insertion loss

dB

@CWL Single-band

≤1.6 (M≤8, N≤8)

≤2.0 (M≤16, N≤16)

≤2.6 (M≤32, N≤32)

≤3.0 (M≤64, N≤64)

@CWL Dual-band

≤2.0 (M≤8, N≤8)

≤2.4 (M≤16, N≤16)

≤3.0 (M≤32, N≤32)

≤3.4 (M≤64, N≤64)

Wavelength dependent loss

dB

≤0.6

polarization dependent loss

dB

≤0.3

Return loss

dB

≥45

crosstalk

dB

≥50

repeatability

dB

≤±0.1

switching time

ms

≤15

lifetime

times

≥10⁹

Maximum optical power

mW

≤500

working voltage

V

DC 5V±10%

working current

A

≤0.5 (M+N≤16)

≤0.8 (M+N≤32)

≤2.0 (M+N≤64)

≤4.0 (M+N≤128)

operating temperature

°C

-5 ~ +75

storage temperature

°C

-40 ~ +85

Package size

mm

M1: 200×180×18 ±0.2 (M+N≤32)

custom-made：32<M+N≤128

1. All parameters were tested under a room temperature working environment.

2. All parameters do not include the insertion loss of the connector.

3. The wavelength-dependent loss test range is ±20nm.

operating wavelength

nm

850±30, 1310±30

Wavelength of test

nm

850/1310

insertion loss

dB

@CWL Single-band

≤1.6 (M≤12, N≤12)

≤2.0 (M≤16, N≤16)

@CWL Dual-band

≤2.0 (M≤12, N≤12)

≤2.4 (M≤16, N≤16)

Wavelength dependent loss

dB

≤0.6

polarization dependent loss

dB

≤0.4

Return loss

dB

≥30

crosstalk

dB

≥30

repeatability

dB

≤±0.1

switching time

ms

≤15

lifetime

times

≥10⁹

Maximum optical power

mW

≤500

working voltage

V

DC 5V±10%

working current

A

≤0.5 (M+N≤16)

≤0.8 (M+N≤32)

operating temperature

°C

-5 ~ +70

storage temperature

°C

-40 ~ +85

Package size

mm

M1: 200×180×18 ±0.2 (M+N≤32)

1. All parameters were tested under a room temperature working environment.

2. All parameters do not include the insertion loss of the connector.

3. The wavelength-dependent loss test range is ±20nm.